Nd:YVO4 –I-Diode Pumped Solid-state Lasers
Incazelo Yomkhiqizo
I-Nd:YVO4 ingakhiqiza ama-IR anamandla futhi azinzile, ama-laser aluhlaza, aluhlaza okwesibhakabhaka anomklamo we-Nd:YVO4 kanye namakristalu aphindwe kabili. Kuzinhlelo zokusebenza lapho idizayini ehlangene kakhulu kanye nokuphumayo kwemodi eyodwa yobude-longitudinal kudingeka khona, i-Nd:YVO4 ibonisa izinzuzo zayo ezikhethekile ngaphezu kwamanye amakristalu e-laser avame ukusetshenziswa.
Izinzuzo Ze-Nd:YVO4
● Umkhawulo ophansi we-lasing kanye nokusebenza kahle kwe-slope ephezulu
● Isiphambano sokukhishwa okuthuthukisiwe okukhulu ku-lasing wavelength
● Ukumuncwa okuphezulu ngaphezu komkhawulokudonsa obanzi wokumpompa wamaza wamaza
● I-Optically uniaxial kanye ne-birefringence enkulu ikhipha i-laser polarized
● Ukuncika okuphansi kubude begagasi bokumpompa futhi kuvame ekuphumeni kwemodi eyodwa
Izakhiwo Eziyisisekelo
Ukuminyana kwe-athomu | ~1.37x1020 ama-athomu/cm2 |
Isakhiwo Sekristalu | I-Zircon Tetragonal, iqembu lesikhala D4h, a=b=7.118, c=6.293 |
Ukuminyana | 4.22 g/cm2 |
Mohs Ukuqina | Okufana nengilazi, 4.6 ~ 5 |
Ukunwetshwa kwe-Thermal I-Coefficient | αa=4.43x10-6/K,αc=11.37x10-6/K |
I-Melting Point | 1810 ± 25℃ |
Lasing Wavelengths | 914nm, 1064 nm, 1342 nm |
I-Thermal Optical I-Coefficient | dna/dT=8.5x10-6/K, dnc/dT=3.0x10-6/K |
Ukukhishwa Okukhuthazwayo Isigaba esiphambanayo | 25.0x10-19 cm2 , @1064 nm |
I-Fluorescent Ukuphila konke | 90 ms (cishe 50 ms for 2 atm% Nd doped) @808nm |
I-Absorption Coefficient | 31.4 cm-1 @ 808 nm |
Ubude bokumuncwa | 0.32 mm @ 808 nm |
Ukulahlekelwa Kwangaphakathi | Ngaphansi kuka-0.1% cm-1 , @1064 nm |
Thola umkhawulokudonsa | 0.96 nm (257 GHz) @ 1064 nm |
I-Polarized Laser Ukukhipha isisu | ihambisana ne-optic eksisi (c-eksisi) |
I-Diode Pumped I-Optical kuya ku-Optical Ukusebenza kahle | > 60% |
I-Sellmeier Equation (yamakristalu e-YVO4 amsulwa) | no2(λ) =3.77834+0.069736/(λ2 - 0.04724) - 0.0108133λ2 |
no2(λ) =4.59905+0.110534/(λ2 - 0.04813) - 0.0122676λ2 |
Imingcele Yezobuchwepheshe
I-Dopant concentration | 0.2 ~ 3 atm% |
Ukubekezelelana kwe-Dopant | ngaphakathi kwe-10% yokugxila |
Ubude | 0.02 ~ 20mm |
Ukucaciswa kwe-coating | I-AR @ 1064nm, R< 0.1% & HT @ 808nm, T>95% |
HR @ 1064nm, R>99.8% & HT@808nm, T>9% | |
HR @ 1064nm, R>99.8%, HR @ 532 nm, R>99% & HT @ 808 nm, T>95% | |
Ukuqondisa | i-a-cut crystalline direction (+/-5℃) |
Ukubekezelela Dimensional | +/-0.1mm(okujwayelekile), Ukunemba okuphezulu +/-0.005mm kungatholakala uma kuceliwe. |
Ukuhlanekezela kwe-Wavefront | <λ/8 ku-633nm |
Ikhwalithi yobuso | Kungcono kuno-20/10 Scratch/Dig nge-MIL-O-1380A ngayinye |
Ukufana | < 10 arc amasekhondi |