Ububanzi bezinto ezibonakalayo ze-InGaAs bungu-900-1700nm, futhi umsindo wokuphindaphinda uphansi kunalowo we-germanium material.Ngokuvamile isetshenziswa njengendawo ephindaphindayo ye-heterostructure diode.Okubalulekile kulungele ukuxhumana kwe-fiber optical enesivinini esikhulu, futhi imikhiqizo yezentengiso ifinyelele isivinini esingu-10Gbit/s noma ngaphezulu.