Ububanzi bezinto ezibonakalayo ze-InGaAs bungu-900-1700nm, futhi umsindo wokuphindaphinda uphansi kunalowo we-germanium material. Ngokuvamile isetshenziswa njengendawo ephindaphindayo ye-heterostructure diode. Impahla ifanele ukuxhumana kwe-high-speed optical fiber, futhi imikhiqizo yezentengiso ifinyelele isivinini esingu-10Gbit/s noma ngaphezulu.