I-ZnGeP2 — I-Saturated Infrared Nonlinear Optics
Incazelo Yomkhiqizo
Ngenxa yalezi zakhiwo eziyingqayizivele, yaziwa njengenye yezinto ezithembisayo kakhulu zezinhlelo zokusebenza ze-optical ezingaqondile. I-ZnGeP2 ingakwazi ukukhiqiza i-laser eqhubekayo engu-3–5 μm ekhishwa ngobuchwepheshe be-optical parametric oscillation (OPO). Ama-Lasers, asebenza efasiteleni lokudluliswa kwe-atmospheric lika-3–5 μm abaluleke kakhulu ezinhlelweni eziningi, njenge-infrared counter measure, ukuqapha amakhemikhali, izisetshenziswa zezokwelapha, nokuzwa ukude.
Singanikela ngekhwalithi ephezulu yokubona i-ZnGeP2 ene-coefficient yokumunca ephansi kakhulu engu-α <0.05 cm-1(kumaza wamaza wepompo angu-2.0-2.1 µm), engasetshenziswa ukukhiqiza i-laser eshintshwayo emaphakathi ne-infrared esebenza kahle kakhulu ngezinqubo ze-OPO noma ze-OPA.
Amandla ethu
I-Dynamic Temperature Field Technology yadalwa futhi yasetshenziswa ukuze kuhlanganiswe i-ZnGeP2 polycrystalline. Ngalobu buchwepheshe, ngaphezu kwe-500g high purity ZnGeP2 polycrystalline enezinhlamvu ezinkulu iye yahlanganiswa ngesikhathi esisodwa.
Indlela ye-Horizontal Gradient Freeze ehlanganiswe ne-Directional Necking Technology (engehlisa ukuminyana kokususwa kahle) isetshenziswe ngempumelelo ekukhuleni kwekhwalithi ephezulu ye-ZnGeP2.
I-ZnGeP2 yezinga eliphezulu yekhilogremu enobubanzi obukhulu kunawo wonke emhlabeni (Φ55 mm) ikhuliswe ngempumelelo ngendlela ye-Vertical Gradient Freeze.
Ubulukhuni obungaphezulu kanye nokucaba kwemishini yekristalu, ngaphansi kuka-5Å no-1/8λ ngokulandelanayo, kutholwe ngobuchwepheshe bethu bokwelapha obuphezulu be-trap.
Ukuchezuka kwe-engeli yokugcina yamadivayisi ekristalu kungaphansi kwedigri engu-0.1 ngenxa yokusetshenziswa kokuma okunembayo nezindlela zokusika ezinembayo.
Amadivayisi asebenza kahle kakhulu azuzwe ngenxa yekhwalithi ephezulu yamakristalu kanye nobuchwepheshe bokucubungula ikristalu obusezingeni eliphezulu (I-3-5μm mid-infrared laser tunable laser yenziwe ngokusebenza kahle kokuguqulwa okungaphezu kuka-56% lapho iphampu ngokukhanya okungu-2μm. umthombo).
Iqembu lethu locwaningo, ngokuhlola okuqhubekayo kanye nokusungula izinto ezintsha zobuchwepheshe, liye lakwazi ngempumelelo ubuchwepheshe bokuhlanganiswa kwe-polycrystalline ephezulu ye-ZnGeP2, ubuchwepheshe bokukhula obunobukhulu obukhulu kanye nekhwalithi ephezulu ye-ZnGeP2 kanye nokuqondiswa kwekristalu kanye nobuchwepheshe bokucubungula obunembayo; ingahlinzeka ngamadivayisi e-ZnGeP2 namakristalu asekuqaleni akhule ngokwesilinganiso esikhulu ngokufana okuphezulu, i-coefficient ephansi yokumuncwa, ukuzinza okuhle, nokusebenza kahle kokuguqulwa okuphezulu. Ngesikhathi esifanayo, sisungule isethi yonke yesikhulumi sokuhlola ukusebenza kwekristalu okusenza sibe nekhono lokuhlinzeka ngezinsizakalo zokuhlola ukusebenza kwekristalu kumakhasimende.
Izinhlelo zokusebenza
● Isizukulwane sesibili, sesithathu, nesine se-harmonic ye-CO2-laser
● Ukukhiqiza ipharamethikhi ebonakalayo ngokumpompa kubude begagasi obungu-2.0 µm
● Isizukulwane sesibili se-harmonic se-CO-laser
● Ukukhiqiza imisebe ehlangene ku-submillimeterrange ukusuka ku-70.0 µm ukuya ku-1000 µm
● Ukukhiqizwa kwamafrikhwensi ahlanganisiwe emisebe ye-CO2- kanye ne-CO-laser namanye ama-laser asebenza endaweni yekristalu ebonisa ngale.
Izakhiwo Eziyisisekelo
Amakhemikhali | ZnGeP2 |
I-Crystal Symmetry neClass | i-tetragonal, -42m |
I-Lattice Parameters | = 5.467 Å c = 12.736 Å |
Ukuminyana | 4.162 g/cm3 |
Mohs Ukuqina | 5.5 |
I-Optical Class | I-uniaxial enhle |
Ibanga Lokudluliswa Okusebenzisekayo | 2.0 um - 10.0 um |
I-Thermal Conductivity @ T= 293 K | 35 W/m∙K (⊥c) 36 W/m∙K ( ∥ c) |
Ukunwetshwa kwe-Thermal @ T = 293 K kuya ku-573 K | 17.5 x 106 K-1 (⊥c) 15.9 x 106 K-1 ( ∥ c) |
Imingcele Yezobuchwepheshe
Ukubekezelela Ububanzi | +0/-0.1 mm |
Ukubekezelela Ubude | ±0.1 mm |
Ukubekezelela Orientation | <30 arcmin |
Ikhwalithi Yobuso | 20-10 SD |
Ukucaba | <λ/4@632.8 nm |
Ukufana | <30 arcsec |
I-Perpendicularity | <5 arcmin |
I-Chamfer | <0.1 mm x 45° |
Ibanga lokubonisa ngale | 0.75 - 12.0 ?m |
Ama-Coefficients angaqondile | d36 = 68.9 pm/V (ku-10.6μm) d36 = 75.0 pm/V (ku-9.6 μm) |
Umonakalo Threshold | 60 MW/cm2 ,150ns@10.6μm |