I-ZnGeP2 — I-Saturated Infrared Nonlinear Optics
Incazelo Yomkhiqizo
Ngenxa yalezi zakhiwo eziyingqayizivele, yaziwa njengenye yezinto ezithembisayo kakhulu zezinhlelo zokusebenza ze-optical ezingaqondile.I-ZnGeP2 ingakwazi ukukhiqiza i-laser eqhubekayo engu-3–5 μm eqhutshwa ngobuchwepheshe be-optical parametric oscillation (OPO).Ama-Lasers, asebenza efasiteleni lokudluliswa kwe-atmospheric lika-3–5 μm abaluleke kakhulu ezinhlelweni eziningi, njenge-infrared counter measure, ukuqapha amakhemikhali, izisetshenziswa zezokwelapha, nokuzwa ukude.
Singanikela ngekhwalithi ephezulu yokubona i-ZnGeP2 ene-coefficient yokumunca ephansi kakhulu engu-α <0.05 cm-1(kumaza wamaza wepompo angu-2.0-2.1 µm), engasetshenziswa ukukhiqiza i-laser eshintshwayo emaphakathi ne-infrared esebenza kahle kakhulu ngezinqubo ze-OPO noma ze-OPA.
Amandla ethu
I-Dynamic Temperature Field Technology yadalwa futhi yasetshenziswa ukuze kuhlanganiswe i-ZnGeP2 polycrystalline.Ngalobu buchwepheshe, ngaphezu kwe-500g high purity ZnGeP2 polycrystalline enezinhlamvu ezinkulu iye yahlanganiswa ngesikhathi esisodwa.
Indlela ye-Horizontal Gradient Freeze ehlanganiswe ne-Directional Necking Technology (engehlisa ukuminyana kokususwa kahle) isetshenziswe ngempumelelo ekukhuleni kwekhwalithi ephezulu ye-ZnGeP2.
I-ZnGeP2 yezinga eliphezulu yekhilogremu enobubanzi obukhulu kunawo wonke emhlabeni (Φ55 mm) ikhuliswe ngempumelelo ngendlela ye-Vertical Gradient Freeze.
Ubulukhuni obungaphezulu kanye nokucaba kwemishini yekristalu, engaphansi kuka-5Å no-1/8λ ngokulandelanayo, kutholwe ngobuchwepheshe bethu be-trap fine treatment surface.
Ukuchezuka kwe-engeli yokugcina yamadivayisi ekristalu kungaphansi kwedigri engu-0.1 ngenxa yokusetshenziswa kokuma okunembayo nezindlela zokusika ezinembayo.
Amadivayisi asebenza kahle kakhulu azuzwe ngenxa yekhwalithi ephezulu yamakristalu kanye nobuchwepheshe bokucubungula ikristalu obusezingeni eliphezulu (I-3-5μm mid-infrared laser tunable laser yenziwe ngokusebenza kahle kokuguqulwa okungaphezu kuka-56% lapho iphampu ngokukhanya okungu-2μm. umthombo).
Iqembu lethu locwaningo, ngokuhlola okuqhubekayo kanye nokusungula izinto ezintsha zobuchwepheshe, liye lakwazi ngempumelelo ubuchwepheshe bokuhlanganiswa kwe-polycrystalline ephezulu ye-ZnGeP2, ubuchwepheshe bokukhula obunobukhulu obukhulu kanye nekhwalithi ephezulu ye-ZnGeP2 kanye nokuqondiswa kwekristalu kanye nobuchwepheshe bokucubungula obunembayo;ingahlinzeka ngamadivayisi e-ZnGeP2 namakristalu asekuqaleni akhule ngokwesilinganiso esikhulu ngokufana okuphezulu, i-coefficient ephansi yokumuncwa, ukuzinza okuhle, nokusebenza kahle kokuguqulwa okuphezulu.Ngesikhathi esifanayo, sisungule isethi yonke yesikhulumi sokuhlola ukusebenza kwekristalu okusenza sibe nekhono lokuhlinzeka ngezinsizakalo zokuhlola ukusebenza kwekristalu kumakhasimende.
Izinhlelo zokusebenza
● Isizukulwane sesibili, sesithathu, nesine se-harmonic ye-CO2-laser
● Ukukhiqiza ipharamethikhi ebonakalayo ngokumpompa kubude begagasi obungu-2.0 µm
● Isizukulwane sesibili se-harmonic se-CO-laser
● Ukukhiqiza imisebe ehlangene ku-submillimeterrange ukusuka ku-70.0 µm ukuya ku-1000 µm
● Ukukhiqizwa kwamafrikhwensi ahlanganisiwe emisebe ye-CO2- kanye ne-CO-laser namanye ama-laser asebenza endaweni yekristalu ebonisa ngale.
Izakhiwo Eziyisisekelo
| Amakhemikhali | ZnGeP2 |
| I-Crystal Symmetry neClass | i-tetragonal, -42m |
| I-Lattice Parameters | = 5.467 Å c = 12.736 Å |
| Ukuminyana | 4.162 g/cm3 |
| Mohs Ukuqina | 5.5 |
| I-Optical Class | I-uniaxial enhle |
| Ibanga Lokudluliswa Okusebenzisekayo | 2.0 um - 10.0 um |
| I-Thermal Conductivity @ T= 293 K | 35 W/m∙K (⊥c) 36 W/m∙K ( ∥ c) |
| Ukunwetshwa kwe-Thermal @ T = 293 K kuya ku-573 K | 17.5 x 106 K-1 (⊥c) 15.9 x 106 K-1 ( ∥ c) |
Imingcele Yezobuchwepheshe
| Ukubekezelela Ububanzi | +0/-0.1 mm |
| Ukubekezelela Ubude | ±0.1 mm |
| Ukubekezelela Orientation | <30 arcmin |
| Ikhwalithi Yobuso | 20-10 SD |
| Ukucaba | <λ/4@632.8 nm |
| Ukufana | <30 arcsec |
| I-Perpendicularity | <5 arcmin |
| I-Chamfer | <0.1 mm x 45° |
| Ibanga lokubonisa ngale | 0.75 - 12.0 ?m |
| Ama-Coefficients angaqondile | d36 = 68.9 pm/V (ku-10.6μm) d36 = 75.0 pm/V (ku-9.6 μm) |
| Umonakalo Threshold | 60 MW/cm2 ,150ns@10.6μm |
